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Description
STMICROELECTRONICS STW4N150 Power MOSFET, N Channel, 4 A, 1.5 kV, 7 ohm, 10 V, 4 VThe STW4N150 is a 1500V N channel Power MOSFET developed using the well consolidated high voltage MESH OVERLAY process. The strengthened layout coupled with the proprietary edge termination structure gives the lowest RDS (on) per area, unrivalled gate charge and switching characteristics. Improved gate charge and lower power dissipation to meet today's challenging efficiency requirements. 100% Avalanche tested Intrinsic capacitances and Qg minimized
- 100% Avalanche tested
- Intrinsic capacitances and Qg minimized
- High speed switching
Applications
Industrial
Product details
| Power Dissipation Pd | 160W |
| Operating Temperature Max | 150�C |
| Continuous Drain Current Id | 4A |
| Transistor Polarity | N Channel |
| No. of Pins | 3Pins |
| Threshold Voltage Vgs | 4V |
| Product Range | - |
| Drain Source Voltage Vds | 1.5kV |
| Rds(on) Test Voltage Vgs | 10V |
| Transistor Case Style | TO-247 |
| On Resistance Rds(on) | 7ohm |
| MSL | - |
Other details
| Brand | STMICROELECTRONICS |
| Part Number | STW4N150 |
| Quantity | Each |
| Technical Data Sheet EN |
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Shipping Notes
- Free Standard Shipping on $100+ Orders to the USA.
- Except Preorder products are shipped in 48 hours.
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- Standard Shipping : 3-10 business days
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Exchange/Return Notes
- We offer a 30-day return/exchange service after receiving.
- Final sale items are not eligible for returns or exchanges.
- To process your return/exchange, please contact us at [email protected]
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