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Description
ON SEMICONDUCTOR TIP122G Bipolar (BJT) Single Transistor, Darlington, NPN, 100 V, 65 W, 5 A, 1000 hFEThe TIP122G is an NPN Plastic Medium Power Complementary Silicon Transistor designed for general purpose amplifier and low speed switching applications. This transistor features monolithic construction with built in base emitter shunt resistors. High DC current gain Applications Industrial Product details Power Dissipation Pd 65W DC Collector Current 5A Collector Emitter Voltage V(br)ceo 100V Transition Frequency ft Operating Temperature Max 150C
- High DC current gain
Applications
Industrial
Product details
| Power Dissipation Pd | 65W |
| DC Collector Current | 5A |
| Collector Emitter Voltage V(br)ceo | 100V |
| Transition Frequency ft | - |
| Operating Temperature Max | 150°C |
| Transistor Polarity | NPN |
| DC Current Gain hFE | 1000hFE |
| No. of Pins | 3Pins |
| Product Range | - |
| Automotive Qualification Standard | - |
| Transistor Case Style | TO-220 |
| MSL | - |
Other details
| Brand | ON SEMICONDUCTOR |
| Part Number | TIP122G |
| Quantity | Each |
| Technical Data Sheet EN | |
| Product Change Notice EN |
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Shipping Notes
- Free Standard Shipping on $100+ Orders to the USA.
- Except Preorder products are shipped in 48 hours.
- Delivery to the USA:
- Standard Shipping : 3-10 business days
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Exchange/Return Notes
- We offer a 30-day return/exchange service after receiving.
- Final sale items are not eligible for returns or exchanges.
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