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Description
STMICROELECTRONICS BDX53C Bipolar (BJT) Single Transistor, Darlington, NPN, 100 V, 60 W, 8 A, 750 hFEThe BDX53C from STMicroelectronics is a through hole complementary power darlington transistor in TO 220 package. This device manufactured in planar base island technology with monolithic darlington configuration. This transistor features good DC gain and high fT frequency. BDX53C is typically suited for linear, switching industrial equipment and audio amplification. Collector to emitter voltage (Vce) is 100V Collector current (Ic) is 8A Power
- Collector to emitter voltage (Vce) is 100V
- Collector current (Ic) is 8A
- Power dissipation (Pd) is 60W
- Collector to emitter saturation voltage of 2V at 3A collector current
- DC current gain (hFE) of 750 at 3A collector current
- Operating junction temperature range from 150°C
Applications
Power Management, Consumer Electronics, Portable Devices, Industrial
Product details
| Power Dissipation Pd | 60W |
| DC Collector Current | 8A |
| Collector Emitter Voltage V(br)ceo | 100V |
| Transition Frequency ft | - |
| Operating Temperature Max | 150°C |
| Transistor Polarity | NPN |
| DC Current Gain hFE | 750hFE |
| No. of Pins | 3Pins |
| Product Range | - |
| Automotive Qualification Standard | - |
| Transistor Case Style | TO-220 |
| MSL | - |
Other details
| Brand | STMICROELECTRONICS |
| Part Number | BDX53C |
| Quantity | Each |
| Technical Data Sheet EN | |
| Product Change Notice EN |
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