Mechanical exfoliation MoS2 on SiO2/Si

Mechanical exfoliation MoS2 on SiO2/SiProduct Name Name: Mechanical exfoliation MoS2 on SiO2 Si Product Overview Mechanical stripping of silicon oxide silicon substrate single layer molybdenum disulfide is a kind of single layer film material prepared from molybdenum disulfide block by mechanical stripping. The mechanical stripping method, also known as the "tape stripping method", was first proposed by Novoselov et al in 2004 when preparing single layer graphene. This method uses the

Product Name

Name: Mechanical exfoliation MoS2 on SiO2/Si

^{Product Overview}

Mechanical stripping of silicon oxide/silicon substrate single layer molybdenum disulfide is a kind of single layer film material prepared from molybdenum disulfide block by mechanical stripping. The mechanical stripping method, also known as the "tape stripping method", was first proposed by Novoselov et al in 2004 when preparing single-layer graphene. This method uses the friction and relative motion between the tape and the block material to make the thin layer fall off from the block, and uses the adhesive force of the tape to overcome the weak van der Waals force between molecular layers, so as to realize the separation of layer from layer. This method is also suitable for the preparation of single layer or less layer disulfide films. The operation involves using tape to peel off the crystal sheet from the disulfide block, then using another piece of tape to attach to the other side of the disulfide crystal sheet, tearing two pieces of tape to separate the disulfide sheet, resulting in fewer layers. After repeated pasting and ripping the tape, disulfide with few or single layers can be obtained. Finally, it was pasted on the substrate with ultrasonic cleaning and ion cleaning, and the morphology was characterized. The local monolayer disulfide was observed in the microscope. Thin layers of disulfide are easily oxidized in air, and the oxidized material will lose its original properties. Therefore, oxygen isolation is required during long-term storage and use.

^{Technical Parameter}

Substrate: SiO2/Si

Oxide layer:300nm

Substrate Size: 10 mm x 10 mm

Mos2 area::0 µm2

^{Product Features}

Crystal structure: A single layer of disulfide consists of a central metal atom with two S atoms in a hexagonal arrangement, which is similar in structure to graphene and also has graphene-like properties.

Optical properties: The disulfide prepared by mechanical stripping has excellent optical properties, such as wide gap, high absorption coefficient and strong fluorescence emission, which can study the layer number and fluorescence effect.

Electrical properties: Monolayer disulfide has excellent electrical properties, such as high carrier mobility, low resistivity and high transmittance, which makes it have a wide range of applications in the field of nanoelectronics.

Mechanicl properties: Monolayer disulfide has excellent mechanical properties, such as high elastic modulus, high strength and ultra-thin thickness, making it a potential application in the field of nanomechanics.

Application Fields

Nanoelectronics: can be used to prepare field effect transistors, photodetectors and other electronic devices.

Optoelectronics: can be used to prepare solar cells, photocatalysts and other photoelectric devices.

Catalytic field: Monolayer disulfide has catalytic activity and can be used in catalytic processes such as water decomposition reactions.

Bioimaging: disulfide prepared by mechanical stripping also has certain application potential in the field of bioimaging

Related Information

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