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Description
4 in Silicon Carbide 4H-SiC Semi-insulating Ingot, Dummy Grade8 inch diameter Silicon Carbide (SiC) Wafers Specifications Grade Zero MPD Grade Dummy Grade Diameter 199. 5 200 mm Thickness 500 um + 25 um 350 um + 25 um Wafer Orientation Off axis: 4. 0 deg toward <11 20> + 0. 5 deg Micropipe Density (MPD) <0. 5 cm 2 <30 cm 2 TTV Bow Warp <10um 35um <70um <15um 50um <100um Electrical Resistivity (Ohm cm) 0. 015~0. 028 Notch {10 10} + 5. 0 deg Edge exclusion 3 mm Surface Roughness Optical Polish Ra 1 nm CMP Ra 0. 5
8 inch diameter Silicon Carbide (SiC) Wafers Specifications
|
Grade |
Zero MPD Grade |
Dummy Grade |
|
Diameter |
199.5-200 mm |
|
|
Thickness |
500 um +/- 25 um 350 um +/- 25 um |
|
|
Wafer Orientation |
Off axis: 4.0 deg toward <11-20> +/-0.5 deg |
|
|
Micropipe Density (MPD) |
<0.5 cm-2 |
<30 cm-2 |
|
TTV /Bow /Warp |
<10um /±35um /<70um |
<15um /±50um /<100um |
|
Electrical Resistivity (Ohm-cm) |
0.015~0.028 |
|
| Notch | {10-10} +/- 5.0 deg | |
|
Edge exclusion |
3 mm |
|
|
Surface Roughness |
Optical Polish Ra 1 nm |
|
|
CMP Ra 0.5 nm on the Si face |
||
|
Cracks by high intensity light |
None |
Cumulative length 30 mm, single length 2 mm |
|
Hex Plates by high intensity light* |
Cumulative area 0.05 % |
Cumulative area 0.1 % |
|
Polytype Areas by high intensity light* |
None |
Cumulative area 3% |
|
Scratches by high intensity light** |
None |
5 scratches to 1 x wafer diameter cumulative length |
|
Edge chip |
None permitted >0.2mm width and depth |
9 allowed, 1 mm each |
|
Contamination by high intensity light |
None |
|
Notes:
* Defect limits are applicable to the entire wafer surface except for the edge exclusion area, where defects are present.
** The scratches are checked on the Si face only.
Inside the wafer case, the side with laser marking of the serial number is the Carbon face. The Si face is facing down and the Carbon face is facing up.
PROPERTIES OF 4H SILICON CARBIDE CRYSTAL MATERIAL
|
Property |
4H-SiC Single Crystal |
|
Lattice Parameters (Å) |
a=3.076 c=10.053 |
|
Stacking Sequence |
ABCB |
|
Density |
3.21 |
|
Mohs Hardness |
~9.2 |
|
Thermal Expansion Coefficient (CTE) (/K) |
4-5 x 10-6 |
|
Refraction Index @750nm |
no = 2.61 ne = 2.66 |
|
Dielectric Constant |
c ~ 9.66 |
|
Doping Type |
N-type or Semi-insulating |
|
Thermal Conductivity (W/cm-K @298K) (N-type, 0.02 ohm-cm) |
a~4.2 c~3.7 |
|
Thermal Conductivity (W/cm-K @298K) (Semi-insulating type) |
a~4.9 c~3.9
|
|
Band-gap (eV) |
3.23 |
|
Break-Down Electrical Field (V/cm) |
3-5 x 106 |
|
Saturation Drift Velocity (m/s) |
2.0 x 105 |
|
Wafer and Substrate Sizes |
Wafers: 2, 4, 6, 8 inch; smaller substrates: 10x10, 20x20 mm, other sizes are available and can be custom-made upon request |
Price
Advance Supplies offers the best price on the market for high quality SiC wafers and SiC crystal substrates up to six (6) inch diameter. Our price matching policy guarantees you the best price for the SiC crystal products with comparable specifications. Contact us today to get your quote.
Customization
Customized SiC crystal products can be made to meet customer's particular requirements and specifications.
Shipping Notes
- Free Standard Shipping on $100+ Orders to the USA.
- Except Preorder products are shipped in 48 hours.
- Delivery to the USA:
- Standard Shipping : 3-10 business days
- If time is of the essence, please consider selecting expedited delivery for faster service.
Exchange/Return Notes
- We offer a 30-day return/exchange service after receiving.
- Final sale items are not eligible for returns or exchanges.
- To process your return/exchange, please contact us at [email protected]
- Please click here for more details>>> Return & Exchange Policy